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Proceedings Paper

Selective MOVPE of III-nitrides and device fabrication on an Si substrate
Author(s): Nobuhiko Sawaki
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Paper Abstract

Growth of III-nitrides on silicon is investigated to realize optical devices on silicon substrate. The emphasis is focused on the growth of highly qualified GaN micro-crystals on patterned Si substrate so that we may achieve GaN-Si integration. Because of the differences in the crystal structure and the thermal expansion coefficient, the epitaxial layer is subject to defects/cracks, which are overcome by selective area growth (SAG) on patterned Si substrate. By using the anisotropy etching of the Si, we can make {111} facet of Si on the substrate surface. The SAG of the GaN is achieved on the thus prepared {111} facet. As a result, growth of non-polar or semi-polar GaN has been achieved in self-organizing manner. The growth of (1-101), (11-22) and (11-20)GaN are demonstrated on (001), (113) and (110) Si substrate, respectively. Fabrication of an optical waveguide and light emitting diode are demonstrated on Si substrate.

Paper Details

Date Published: 19 February 2009
PDF: 12 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 727902 (19 February 2009); doi: 10.1117/12.822632
Show Author Affiliations
Nobuhiko Sawaki, Nagoya Univ. (Japan)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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