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Proceedings Paper

Micromagnetic simulation of microwave assisted switching in Ni80Fe20 thin film element
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Paper Abstract

The authors demonstrate microwave assisted switching process of Ni80Fe20 thin film element with micromagnetics. Effects of microwave amplitude and frequency on the magnetization reversal were focused. Numerical results showed that the coercivity of Ni80Fe20 thin film element can be reduced by the modification of the microwave field, and the most evident reduction of coercivity was found at resonance frequencies. Considerable Fluctuations of switching fields are found at the natural resonance frequencies and high microwave amplitudes, which can be explained by scattering of nucleation sites induced by the thermal effect of the microwave filed.

Paper Details

Date Published: 19 March 2009
PDF: 6 pages
Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71250O (19 March 2009); doi: 10.1117/12.822624
Show Author Affiliations
Peng Li, Huazhong Univ. of Science and Technology (China)
Xiaofei Yang, Huazhong Univ. of Science and Technology (China)
Xiaomin Cheng, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7125:
Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage
Fuxi Gan, Editor(s)

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