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Proceedings Paper

Study of Si-doped Sb2Te3 film for low power and good data retention phase-change memory application
Author(s): Yin Zhang; Jie Feng; Bingchu Cai
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Paper Abstract

Electrical, thermal and crystallization properties of 20at.% Si-doped Sb2Te3 film were investigated and compared to those of conventional Ge2Sb2Te5 film by annealing temperature-dependent resistivity measurement, differential scanning calorimetry (DSC) and in situ time-dependent resistance measurement at various isothermal annealing temperatures. The resistivity of this doped Sb2Te3 film after 400 °C annealing is nearly ten times that of Ge2Sb2Te5 film and its melting temperature is about 100 °C lower. The resistivity ratio can reach 106 during the phase transition, accompanied with a smaller thickness change of 1.7% in contrast to that of Ge2Sb2Te5 film of 6.8%. Crystallization temperature of 20at.% Si-Sb2Te3 film is 271 °C and maximum temperature for a 10-year lifetime is estimated to be 144 °C with crystallization activation energy of 3.65 eV, which promises better data retention than Ge2Sb2Te5 film. Micrometer-sized phase-change memory devices were also fabricated and examined. Lower power consumption is obtained in the RESET operation of the memory device using 20at.% Si-Sb2Te3, which should be attributed to higher crystalline resistivity and lower melting temperature of the film.

Paper Details

Date Published: 19 March 2009
PDF: 8 pages
Proc. SPIE 7125, Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage, 71251T (19 March 2009); doi: 10.1117/12.822568
Show Author Affiliations
Yin Zhang, Shanghai Jiaotong Univ. (China)
Jie Feng, Shanghai Jiaotong Univ. (China)
Bingchu Cai, Shanghai Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7125:
Eighth International Symposium on Optical Storage and 2008 International Workshop on Information Data Storage
Fuxi Gan, Editor(s)

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