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Proceedings Paper

Progress with antimonide-based detectors at SCD
Author(s): Olga Klin; Steve Grossman; Noam Snapi; Maya Brumer; Inna Lukomsky; Michael Yassen; Boris Yofis; Alex Glozman; Ami Zemel; Tal Fishman; Eyal Berkowicz; Osnat Magen; Joelle Oiknine-Schlesinger; Itay Shtrichman; Eliezer Weiss; P. C. Klipstein
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Paper Abstract

Detectors composed of novel Antimonide Based Compound Semiconductor (ABCS) materials offer some unique advantages. InAs/GaSb type II superlattices (T2SL) offer low dark currents and allow full bandgap tunability from the MWIR to the VLWIR. InAs1-xSbx alloys (x~0.1) also offer low dark currents and can be used to make MWIR devices with a cut-off wavelength close to 4.2μm. Both can be grown on commercially available GaSb substrates and both can be combined with lattice matched GaAlSbAs barrier layers to make a new type of High Operating Temperature (HOT) detector, known as an XBn detector. In an XBn detector the Generation-Recombination (G-R) contribution to the dark current can be suppressed, giving a lower net dark current, or allowing the same dark current to be reached at a higher temperature than in a conventional photodiode. The ABCS program at SCD began several years ago with the development of an epi-InSb detector whose dark current is about 15 times lower than in standard implanted devices. This detector is now entering production. More recently we have begun developing infrared detectors based both on T2SL and InAsSb alloy materials. Our conventional photodiodes made from T2SL materials with a cut-off wavelength in the region of 4.6μm exhibit dark currents consistent with a BLIP temperature of ~ 120-130K at f/3. Characterization results of the T2SL materials and diodes are presented. We have also initiated a program to validate the XBn concept and to develop high operating temperature InAsSb XBn detectors. The crystallographic, electrical and optical properties of the XBn materials and devices are discussed. We demonstrate a BLIP temperature of ~ 150K at f/3.

Paper Details

Date Published: 6 May 2009
PDF: 9 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980G (6 May 2009); doi: 10.1117/12.822429
Show Author Affiliations
Olga Klin, Semiconductor Devices (Israel)
Steve Grossman, Semiconductor Devices (Israel)
Noam Snapi, Semiconductor Devices (Israel)
Maya Brumer, Semiconductor Devices (Israel)
Inna Lukomsky, Semiconductor Devices (Israel)
Michael Yassen, Semiconductor Devices (Israel)
Boris Yofis, Semiconductor Devices (Israel)
Alex Glozman, Semiconductor Devices (Israel)
Ami Zemel, Semiconductor Devices (Israel)
Tal Fishman, Semiconductor Devices (Israel)
Eyal Berkowicz, Semiconductor Devices (Israel)
Osnat Magen, Semiconductor Devices (Israel)
Joelle Oiknine-Schlesinger, Semiconductor Devices (Israel)
Itay Shtrichman, Semiconductor Devices (Israel)
Eliezer Weiss, Semiconductor Devices (Israel)
P. C. Klipstein, Semiconductor Devices (Israel)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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