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Proceedings Paper

Precise TEM sample preparation using the Hitachi NB5000 focused ion/electron beam system
Author(s): Toshihide Agemura; Jamil Clarke; Akinari Morikawa; Takahiro Sato; Mitsuru Konno; Tsuyoshi Onishi
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Paper Abstract

Node sizes of less than 30nm are being adapted to advanced and developing semiconductor devices and dualbeam systems are commonly used in order to fabricate TEM or STEM thin samples for defect analysis. In such an application, it is essentially important how fine of a step the FIB fabrication can be executed and how the surface information on SEM images can be obtained. At the same time, since materials damaged by electron beam irradiation are being introduced into those devices, it is necessary to reduce such damage for obtaining the information of its true structure and dimension. Here, we report how higher acceleration voltages on the SEM can be one of the best conditions for TEM thin film preparation.

Paper Details

Date Published:
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Proc. SPIE 7378, Scanning Microscopy 2009, 73780N; doi: 10.1117/12.821757
Show Author Affiliations
Toshihide Agemura, Hitachi High-Technologies Corp. (Japan)
Jamil Clarke, Hitachi HighTechnologies America, Inc. (United States)
Akinari Morikawa, Hitachi High-Technologies Corp. (Japan)
Takahiro Sato, Hitachi High-Technologies Corp. (Japan)
Mitsuru Konno, Hitachi High-Technologies Corp. (Japan)
Tsuyoshi Onishi, Hitachi High-Technologies Corp. (Japan)


Published in SPIE Proceedings Vol. 7378:
Scanning Microscopy 2009
Michael T. Postek; Dale E. Newbury; S. Frank Platek; David C. Joy; Michael T. Postek; Dale E. Newbury; S. Frank Platek; David C. Joy; Michael T. Postek; Dale E. Newbury; S. Frank Platek; David C. Joy, Editor(s)

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