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Proceedings Paper

8 Gb/s 0.5 V integrated Ge-on-SOI photodetector
Author(s): Johann Osmond; Giovanni Isella; Daniel Chrastina; Hans von Känel; Rolf Kaufmann; Laurent Vivien; Gilles Rasigade; Delphine Marris-Morini; Paul Crozat; Eric Cassan; Suzanne Laval
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Paper Abstract

A vertically illuminated photodetector based on Ge-on-SOI, which operates at 8 Gb/s for reverse bias as low as 0.5 V, is presented. The integrated photodetector also features low dark current and good photogenerated carrier collection efficiency.

Paper Details

Date Published: 20 May 2009
PDF: 8 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660B (20 May 2009); doi: 10.1117/12.821714
Show Author Affiliations
Johann Osmond, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Giovanni Isella, L-NESS, Politecnico di Milano (Italy)
Daniel Chrastina, L-NESS, Politecnico di Milano (Italy)
Hans von Känel, L-NESS, Politecnico di Milano (Italy)
Rolf Kaufmann, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Gilles Rasigade, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Paul Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Suzanne Laval, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)


Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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