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Proceedings Paper

Ge-on-silicon waveguide photodetectors for optical telecommunications
Author(s): Johann Osmond; Laurent Vivien; Jean-Marc Fédéli; Delphine Marris-Morini; Paul Crozat; Jean-François Damlencourt; Eric Cassan; Y. Lecunff; Suzanne Laval
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Paper Abstract

This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 μm wavelength under 4 V reverse bias is 42 GHz.

Paper Details

Date Published: 20 May 2009
PDF: 8 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73660A (20 May 2009); doi: 10.1117/12.821708
Show Author Affiliations
Johann Osmond, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Jean-Marc Fédéli, Commissariat à l'Energie Atomique, DRT/LETI (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Paul Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Jean-François Damlencourt, Commissariat à l'Energie Atomique, DRT/LETI (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)
Y. Lecunff, Commissariat à l'Energie Atomique, DRT/LETI (France)
Suzanne Laval, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud-XI (France)


Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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