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Proceedings Paper

Temperature dependence of terahertz properties for InP
Author(s): Caihong Zhang; Yuanyuan Wang; Jinlong Ma; Biaobing Jin; Weiwei Xu; Lin Kang; Jian Chen; Peiheng Wu; Masayoshi Tonouchi
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Paper Abstract

Terahertz (THz) time-domain spectroscopy (TDS) is attracting more and more attention recently, and has been growing up as a powerful technique for measuring the material parameters. Indium phosphide (InP), which with short carrier average collision time, high band-gap energy and low effective mass, is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 Ω•cm was measured with normal transmitted TDS system for the temperature and frequency ranges of 4.2 - 300 K and 0.2 - 4 THz, respectively. THz beam was placed in a closed box purged with dry nitrogen gas, and the sample was mounted in a MicrostatHe cryostat made by Oxford Instruments. Temperature dependence of THz properties for InP as a function of frequency was characterized.

Paper Details

Date Published: 16 February 2009
PDF: 7 pages
Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770S (16 February 2009); doi: 10.1117/12.821683
Show Author Affiliations
Caihong Zhang, Nanjing Univ. (China)
Yuanyuan Wang, Nanjing Univ. (China)
Jinlong Ma, Nanjing Univ. (China)
Biaobing Jin, Nanjing Univ. (China)
Weiwei Xu, Nanjing Univ. (China)
Lin Kang, Nanjing Univ. (China)
Jian Chen, Nanjing Univ. (China)
Peiheng Wu, Nanjing Univ. (China)
Masayoshi Tonouchi, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 7277:
Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology
Jianquan Yao; Shenggang Liu; Xi-Cheng Zhang, Editor(s)

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