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Proceedings Paper

Erbium-doped chalcogenide fiber ring laser for mid-IR applications
Author(s): L. Mescia; F. Prudenzano; L. Allegretti; M. De Sario; T. Palmisano; V. Petruzzelli; F. Smektala; V. Moizan; V. Nazabal; J. Troles
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Paper Abstract

In recent years, infrared light sources have attracted great attention for their application in remote sensing, sensors, optical communication, medical and military technology, and so on. Innovative erbium-doped microstructured optical fiber ring lasers (EDFRLs) have been proposed in order to increase the performance of the conventional fiber lasers, enabling a number of advantages such as smaller size, higher power, better beam quality. In a previous work, the authors proposed a design of a Fabry Perot laser made of a novel erbium-doped Ga5Ge20Sb10S65 chalcogenide glass, operating in the Mid-IR wavelength range. This work reports the design of a ring laser, made of the same glass, operating at the signal wavelength λs = 4600 nm and at the pump wavelength λp = 806 nm. The design and optimization has been performed in order to improve the laser performance. The numerical computer code, implemented ad-hoc to investigate the fiber ring laser, takes into account the rate equations of the 5-level erbium ion system, the pump and signal power propagation, the energy transfer of the up-conversion and cross-relaxation phenomena, the cavity losses and the coupling losses. The measured amplified spontaneous emission ASE power spectrum has been accurately sampled in 150 wavelength slots from λ1=4200 nm to λ2=4800 nm, to obtain more realistic simulations.

Paper Details

Date Published: 20 May 2009
PDF: 10 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661X (20 May 2009); doi: 10.1117/12.821671
Show Author Affiliations
L. Mescia, Politecnico di Bari (Italy)
F. Prudenzano, Politecnico di Bari (Italy)
L. Allegretti, Politecnico di Bari (Italy)
M. De Sario, Politecnico di Bari (Italy)
T. Palmisano, Politecnico di Bari (Italy)
V. Petruzzelli, Politecnico di Bari (Italy)
F. Smektala, Institut Carnot de Bourgogne, CNRS, Univ. de Bourgogne (France)
V. Moizan, Sciences Chimiques de Rennes, CNRS, Univ. de Rennes 1 (France)
V. Nazabal, Sciences Chimiques de Rennes, CNRS, Univ. de Rennes 1 (France)
J. Troles, Sciences Chimiques de Rennes, CNRS, Univ. de Rennes 1 (France)


Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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