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Proceedings Paper

RF MEMS switches based on an alloy of aluminum-silicon-copper
Author(s): S. Klein; C. Comtesse; A. Bittner; H. Seidel; V. Ziegler; U. Prechtel; U. Schmid
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Paper Abstract

In this work we report on the development of electrostatically actuated RF MEMS switches which are based on a one sided clamped cantilever made of two layers of the same alloy of aluminum-silicon-copper. The switches are based on a low-complexity design and are fabricated by conventional sputter deposition and wet etching techniques on oxidized silicon substrates. Due to a well defined intrinsic stress gradient the cantilevers bend away from the substrate surface after release. This deflection allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces, which help to reduce sticking effects. The temperature behavior of the residual stress of each single layer that are the basis for the switch is investigated up to 400°C. Thereby, the change in stress over temperature as well as stress level in the as-deposited state is strongly dependent on deposition parameters. Furthermore, the change of deflection is evaluated up to 400°C at cantilever-type test structures. Finally, the high frequency performance of the switches was measured in the 23 to 36 GHz range showing good results for isolation and insertion loss.

Paper Details

Date Published: 19 May 2009
PDF: 8 pages
Proc. SPIE 7362, Smart Sensors, Actuators, and MEMS IV, 73621D (19 May 2009); doi: 10.1117/12.821648
Show Author Affiliations
S. Klein, Saarland Univ. (Germany)
C. Comtesse, Saarland Univ. (Germany)
A. Bittner, Saarland Univ. (Germany)
H. Seidel, Saarland Univ. (Germany)
V. Ziegler, EADS Innovation Works (Germany)
U. Prechtel, EADS Innovation Works (Germany)
U. Schmid, Vienna Univ. of Technology (Austria)


Published in SPIE Proceedings Vol. 7362:
Smart Sensors, Actuators, and MEMS IV
Ulrich Schmid, Editor(s)

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