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Proceedings Paper

Nonlinearities of PIN photodiodes and PSPICE simulation
Author(s): Yanli Zhao
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Paper Abstract

It is well known that the performance of modern photodiodes is determined by three basic parameters: sensitivity, response time and noise equivalent power (NEP). In practical situations it is almost always necessary to achieve the maximum product of sensitivity and reciprocal response time (bandwidth). At low Continuous Wave (CW) light incidence, a photodiode gives a signal proportional to optical intensity. But with increasing light power, photocurrent deviates from a linear behavior. High-linear performance is becoming increasingly important for photodiodes because high photocurrents directly translate into an increased dynamic range and reduced noise figure. This is crucial for many photonic systems, including photonic analog-to-digital converters and high-bit-rate digital receivers. The increase of photocurrent depends on two primary factors: one is space-charge limitations, which are influenced by device physical dimensions, structure type, illumination conditions, maximum electric field, and the other is thermal considerations. From the view of long-term reliability of photodiodes, thermal effects are crucial because it results in device failure due to dark current runaway. As known to us, there have many reports on the thermal effect originating from InGaAs intrinsic region. However, nonlinearity originating from both InGaAs intrinsic region and contact resistance is still unclear. In some cases, the contact resistance between metal electrode and semiconductor is not negligible. In this report, N type heavily doped InP single crystal is used as a substrate, on which a buffer layer of n doped InP is grown. Then the intrinsic absorbing layer of InGaAs, and finally a transparent InP cap layer are deposited with MOCVD technique. A circuit model has been developed and the nolinearities of PIN photodiodes has also been discussed.

Paper Details

Date Published: 19 February 2009
PDF: 10 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790V (19 February 2009); doi: 10.1117/12.821558
Show Author Affiliations
Yanli Zhao, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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