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Proceedings Paper

Large-area terahertz emitters based on GaInAsN
Author(s): F. Peter; S. Winnerl; H. Schneider; M. Helm; K. Köhler
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Paper Abstract

We present large-area emitters based on GaInAsN which show efficient THz emission for excitation wavelengths up to 1.35 μm. The substrate material consists of a 1000 nm Ga1-yInyAs1-xNx (y = 0.11 and x = 0.04) layer grown by molecularbeam epitaxy on semi-insulating GaAs. On top there is an additional GaAs/Al0.3Ga0.7As heterostructure with thicknesses of 5 nm for the GaAs and 60 nm for the AlGaAs layer, respectively. Transmission measurements with a Fourier transform spectrometer reveal a bandgap corresponding to a wavelength of 1.5 μm. The resistance of a complete device with an active area of 1 mm2 is 0.3 MΩThis allows operation with high bias fields (30 kV/cm) without being limited by heating.

Paper Details

Date Published: 20 May 2009
PDF: 6 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661R (20 May 2009); doi: 10.1117/12.821483
Show Author Affiliations
F. Peter, Forschungszentrum Dresden-Rossendorf (Germany)
S. Winnerl, Forschungszentrum Dresden-Rossendorf (Germany)
H. Schneider, Forschungszentrum Dresden-Rossendorf (Germany)
M. Helm, Forschungszentrum Dresden-Rossendorf (Germany)
K. Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)


Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)

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