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Proceedings Paper

Enhanced light-extraction in GaN light-emitting diode with binary blazed grating reflector
Author(s): Wenhua Wu; Huaming Wu; Tingwei Wu; Yi Wang; Zhiping Zhou
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Paper Abstract

Enhancement of light extraction in a GaN light-emitting diode (LED) employing a binary blazed grating reflector (BBGR) is presented. The BBGR consists of asymmetrically periodic structure etched on the GaN layer. Rigorous coupled-wave analysis (RCWA) is adopted to calculate the reflectivity of the BBGR, which shows that it has the characteristics of broadband reflection spectrum and very high reflectivity. The result of high angle-averaged reflectivity up to 94% from 300nm to 450nm predicts the potential enhancement of light-extraction efficiency of GaN LEDs with BBGR.

Paper Details

Date Published: 19 February 2009
PDF: 6 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790O (19 February 2009); doi: 10.1117/12.821171
Show Author Affiliations
Wenhua Wu, Huazhong Univ. of Science and Technology (China)
Huaming Wu, Huazhong Univ. of Science and Technology (China)
Tingwei Wu, Huazhong Univ. of Science and Technology (China)
Yi Wang, Huazhong Univ. of Science and Technology (China)
Zhiping Zhou, Peking Univ. (China)
Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)

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