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Proceedings Paper

Character of Nd:GdVO4 laser operating at 1.34 μm with low Nd3+ doped concentrations
Author(s): Rui Zhou; Shuangchen Ruan; Chenli Du; Jianquan Yao
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Paper Abstract

Three Nd:GdVO4 crystals with Nd3+doped concentrations of 0.1, 0.2 and 0.3 at% were involved in the experiment. Their laser characteristics at 1.34 μm were experimentally tested with a diode-end-pumped configuration and a simple plane-parallel cavity. Maximum output powers of 7.3 W, 8.35 and 9.47 W were achieved, respectively. The thermal stress resistances of these crystals were calculated according to the experimental data.

Paper Details

Date Published: 18 February 2009
PDF: 6 pages
Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 72760S (18 February 2009); doi: 10.1117/12.821156
Show Author Affiliations
Rui Zhou, Tianjin Univ. (China)
Shenzhen Univ. (China)
Shuangchen Ruan, Shenzhen Univ. (China)
Chenli Du, Shenzhen Univ. (China)
Jianquan Yao, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 7276:
Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications
Peixiang Lu; Katsumi Midorikawa; Bernd Wilhelmi, Editor(s)

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