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Proceedings Paper

The effective mass of electron enhancement in Γ-valley in bulk GaAs under very high electric field investigated by time-domain terahertz spectroscopy
Author(s): Y. M. Zhu; D. W. Zhang; Y. C. Yang; S. L. Zhuang; K. Hirakawa
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Paper Abstract

By using the free-space terahertz (THz) electro-optic (EO) sampling technique, the THz waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields up to 300 kV/cm were recorded. The initial acceleration signal in THz emission waveforms, which are corresponding to the acceleration of electrons in the bottom of Γ-valley, has been found to start decreasing with applied electric field above 50 kV/cm, in contrast to the simple picture of electron acceleration in the Γ-valley. This result suggests that the effective acceleration mass of electrons in the Γ-valley significantly increases with increasing F, most likely due to strong band mixing under very high fields.

Paper Details

Date Published: 16 February 2009
PDF: 8 pages
Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770H (16 February 2009); doi: 10.1117/12.821094
Show Author Affiliations
Y. M. Zhu, Univ. of Shanghai for Science and Technology (China)
Univ. of Tokyo (Japan)
D. W. Zhang, Univ. of Shanghai for Science and Technology (China)
Y. C. Yang, Univ. of Shanghai for Science and Technology (China)
S. L. Zhuang, Univ. of Shanghai for Science and Technology (China)
K. Hirakawa, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7277:
Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology
Jianquan Yao; Shenggang Liu; Xi-Cheng Zhang, Editor(s)

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