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Proceedings Paper

Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam
Author(s): Pawel E. Malinowski; Joachim John; Frank Barkusky; Jean Yves Duboz; Anne Lorenz; Kai Cheng; Joff Derluyn; Marianne Germain; Piet De Moor; Kyriaki Minoglou; Armin Bayer; Klaus Mann; Jean-Francois Hochedez; Boris Giordanengo; Gustaaf Borghs; Robert Mertens
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Paper Abstract

We report on the results of fabrication and optoelectrical characterization of Gallium Nitride (GaN) based Extreme UltraViolet (EUV) photodetectors. Our devices were Schottky photodiodes with a finger-shaped rectifying contact, allowing better penetration of light into the active region. GaN layers were epitaxially grown on Silicon (111) by Metal- Organic-Chemical Vapor Deposition (MOCVD). Spectral responsivity measurements in the Near UltraViolet (NUV) wavelength range (200-400 nm) were performed to verify the solar blindness of the photodetectors. After that the devices were exposed to the EUV focused beam of 13.5 nm wavelength using table-top EUV setup. Radiation hardness was tested up to a dose of 3.3·1019 photons/cm2. Stability of the quantum efficiency was compared to the one measured in the same way for a commercially available silicon based photodiode. Superior behavior of GaN devices was observed at the wavelength of 13.5 nm.

Paper Details

Date Published: 18 May 2009
PDF: 8 pages
Proc. SPIE 7361, Damage to VUV, EUV, and X-Ray Optics II, 73610T (18 May 2009); doi: 10.1117/12.820691
Show Author Affiliations
Pawel E. Malinowski, Interuniversity MicroElectronic Center (Belgium)
Katholieke Univ. Leuven (Belgium)
Joachim John, Interuniversity MicroElectronic Center (Belgium)
Frank Barkusky, Laser-Lab. Göttingen e.V. (Germany)
Jean Yves Duboz, Ctr. National de la Recherche Scientifique (France)
Anne Lorenz, Interuniversity MicroElectronic Center (Belgium)
Katholieke Univ. Leuven (Belgium)
Kai Cheng, Interuniversity MicroElectronic Center (Belgium)
Joff Derluyn, Interuniversity MicroElectronic Center (Belgium)
Marianne Germain, Interuniversity MicroElectronic Center (Belgium)
Piet De Moor, Interuniversity MicroElectronic Center (Belgium)
Kyriaki Minoglou, Interuniversity MicroElectronic Center (Belgium)
Armin Bayer, Laser-Lab. Göttingen e.V. (Germany)
Klaus Mann, Laser-Lab. Göttingen e.V. (Germany)
Jean-Francois Hochedez, Royal Observatory of Belgium (Belgium)
Boris Giordanengo, Royal Observatory of Belgium (Belgium)
Gustaaf Borghs, Interuniversity MicroElectronic Center (Belgium)
Katholieke Univ. Leuven (Belgium)
Robert Mertens, Interuniversity MicroElectronic Center (Belgium)
Katholieke Univ. Leuven (Belgium)


Published in SPIE Proceedings Vol. 7361:
Damage to VUV, EUV, and X-Ray Optics II
Libor Juha; Saša Bajt; Ryszard Sobierajski, Editor(s)

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