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Proceedings Paper

Highly nonlinear GaSb-based saturable absorber mirrors
Author(s): R. Koskinen; S. Suomalainen; J. Paajaste; S. Kivistö; M. Guina; O. Okhotnikov; M. Pessa
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Paper Abstract

We present a gallium antimonide-based semiconductor saturable absorber mirror (SESAM) operating at 2 μm wavelength region. GaSb-based material system is the preferred choice for fabricating surface-normal devices operating beyond 2 μm because it enables the use of highly reflective semiconductor reflectors and quantum wells for wide wavelength range. For the purpose of generating short laser pules, the SESAM was carefully designed to attain a large modulation depth. The device was utilised successfully to passively Q-switch a 2 μm Tm3+-/Ho3+ -doped fiber laser, demonstrating record-short Q-switch pulses of about 20 ns.

Paper Details

Date Published: 19 May 2009
PDF: 7 pages
Proc. SPIE 7354, Nonlinear Optics and Applications III, 73540G (19 May 2009); doi: 10.1117/12.820690
Show Author Affiliations
R. Koskinen, Tampere Univ. of Technology (Finland)
S. Suomalainen, Tampere Univ. of Technology (Finland)
J. Paajaste, Tampere Univ. of Technology (Finland)
S. Kivistö, Tampere Univ. of Technology (Finland)
M. Guina, Tampere Univ. of Technology (Finland)
RefleKron Ltd. (Finland)
O. Okhotnikov, Tampere Univ. of Technology (Finland)
M. Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7354:
Nonlinear Optics and Applications III
Mario Bertolotti, Editor(s)

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