Share Email Print

Proceedings Paper

Resonantly diode-pumped Er:YAG laser: 1470-nm versus 1530-nm CW pumping case
Author(s): Igor Kudryashov; Nikolai Ter-Gabrielyan; Mark Dubinskii
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Growing interest to high power lasers in the eye-safe spectral domain initiated a new wave of activity in developing solid-state lasers based on bulk Er3+-doped materials. The resonant pumping of SSL allows for shifting significant part of thermal load from gain medium itself to the pump diodes, thus greatly reducing gain medium thermal distortions deleterious to SSL power scaling with high beam quality. The two major resonant pumping bands in Er:YAG are centered around 1470 and 1532 nm. Pumping into each of these bands has its pros and contras. The best approach to resonant pumping of Er:YAG active media in terms of pump wavelength is yet to be determined. We report the investigation results of high power diode-pumped Er:YAG laser aimed at direct comparison of resonant pumping at 1470 and 1532 nm. Two sources used for pumping were: 1530-nm 10-diode bar stack (>300 W CW) and 1470-nm 10-diode bar stack (>650 W CW). Both pumps were spectrally narrowed by external volume Bragg gratings. The obtained spectral width of less than 1 nm allowed for 'in-line' pumping of Er3+ in either band. The obtained CW power of over 87 W is, to the best of our knowledge, the record high power reported for resonantly pumped Er:YAG DPSSL at room temperature.

Paper Details

Date Published: 9 May 2009
PDF: 11 pages
Proc. SPIE 7325, Laser Technology for Defense and Security V, 732505 (9 May 2009); doi: 10.1117/12.820681
Show Author Affiliations
Igor Kudryashov, Princeton Lightwave, Inc. (United States)
Nikolai Ter-Gabrielyan, Army Research Lab. (United States)
Mark Dubinskii, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 7325:
Laser Technology for Defense and Security V
Mark Dubinskii; Stephen G. Post, Editor(s)

© SPIE. Terms of Use
Back to Top