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Proceedings Paper

Wafer fused InP-GaAs optically pumped semiconductor disk laser operating at 1.57 μm
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Paper Abstract

A wafer fusing was applied to integrate an InP-based active medium and a GaAs/AlGaAs distributed Bragg reflector in an optically pumped semiconductor disk laser. Over 50 mW of output power at room temperature in 1570-1585 nm spectral range was demonstrated. The results of this study reveal an important finding: the wafer fusion can be used in emitters with high power. This approach would allow for monolithic integration of lattice-mismatched compounds, quantum-well and quantum-dot based media and promises substantial wavelength tailoring of semiconductor disk lasers.

Paper Details

Date Published: 18 May 2009
PDF: 7 pages
Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550C (18 May 2009); doi: 10.1117/12.820672
Show Author Affiliations
Jari Lyytikäinen, Tampere Univ. of Technology (Finland)
Jussi Rautiainen, Tampere Univ. of Technology (Finland)
Alexei Sirbu, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Alexandru Mereuta, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Andrei Caliman, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Eli Kapon, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Oleg Okhotnikov, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7355:
Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II
Miloslav Dusek; Ivan Prochazka; Roman Sobolewski, Editor(s)

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