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Proceedings Paper

Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires
Author(s): Wei-Chih Tsai; Shui-Jinn Wang; Chih-Ren Tseng; Rong-Ming Ko; Jia-Chuan Lin
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Paper Abstract

This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of ptype nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (Vth) of 1.2 V and a leakage current (Jr at -1V) of 0.02 μA/cm2, respectively. It also exhibits a superior response to UV (366 nm) and AM 1.5G light illuminations. The Vth and the photocurrents (i.e., Jr at -1V) under UV (366 nm @ 6 mW/cm2) and AM 1.5G light were 0.7 V/0.06 μA/cm2 and 0.5 V/ 3.2 μA/cm2, respectively, revealing an increase in the diode current of about 3× and 160×, respectively.

Paper Details

Date Published: 18 May 2009
PDF: 8 pages
Proc. SPIE 7356, Optical Sensors 2009, 73561F (18 May 2009); doi: 10.1117/12.820546
Show Author Affiliations
Wei-Chih Tsai, National Cheng Kung Univ. (Taiwan)
Shui-Jinn Wang, National Cheng Kung Univ. (Taiwan)
Chih-Ren Tseng, National Cheng Kung Univ. (Taiwan)
Rong-Ming Ko, National Cheng Kung Univ. (Taiwan)
Jia-Chuan Lin, St. John's Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7356:
Optical Sensors 2009
Francesco Baldini; Jiri Homola; Robert A. Lieberman, Editor(s)

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