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Preparation of Ni/Zn and NiO/ZnO heterojunction nanowires and their optoelectrical characteristics
Author(s): Wei-Chih Tsai; Shui-Jinn Wang; Chih-Ren Tseng; Rong-Ming Ko; Jia-Chuan Lin
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Paper Abstract

In this study, well-ordered and vertically-aligned metal (nickel (Ni)/zinc (Zn)) and metal oxides (NiO/ZnO) nano heterojunctions (NHJs) were grown inside the nanopores of anodic aluminum oxide template (AAOT) using electrochemical deposition (ECD) and thermal oxidization. The prepared NHJs are with a controllable length and diameter. The electrical properties of NiO/ZnO NHJs show a rectifying behavior of a p-n junction, while the Ni/Zn NHJs show an ohmic behavior. The optoelectronic characteristics demonstrate that the NiO/ZnO NHJs have fairly good sensitivity and response to the ultraviolet (UV) light (366 nm) with decrease in Vth by about 75% and an increase in Jr by about 80% @ 6 mW/cm2. The low dimension of NHJs shows profound quantum confinement effect, which would be potential applications on nano integrated photonics, such as photodetectors, optical sensors and biosensors.

Paper Details

Date Published: 18 May 2009
PDF: 7 pages
Proc. SPIE 7356, Optical Sensors 2009, 73561D (18 May 2009); doi: 10.1117/12.820539
Show Author Affiliations
Wei-Chih Tsai, National Cheng Kung Univ. (Taiwan)
Shui-Jinn Wang, National Cheng Kung Univ. (Taiwan)
Chih-Ren Tseng, National Cheng Kung Univ. (Taiwan)
Rong-Ming Ko, National Cheng Kung Univ. (Taiwan)
Jia-Chuan Lin, St. John's Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7356:
Optical Sensors 2009
Francesco Baldini; Jiri Homola; Robert A. Lieberman, Editor(s)

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