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Proceedings Paper

Terahertz wave generation and detection analysis of nanowire gated field effect transistor
Author(s): Yu Chen; Jin He; Xuehao Mou; Yinglei Wang; Lining Zhang; Yan Song; Mansun Chan
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Paper Abstract

A complete analysis of terahertz(THZ) wave generation and detection of silicon nanowire gated field effect transistor (SNFET) is presented in this paper. Based on the developed SNFET THZ device theory, the dependence of THZ detection of SNFET on bias and structure parameters are obtained and illustrated. The THZ generation condition and various unique characteristics are also demonstrated and analyzed in details. The numerical skills utilized in this paper are also described. Based on the developed numerical tool, the evolution processes of plasma wave in generation and detection mode are also presented.

Paper Details

Date Published: 16 February 2009
PDF: 12 pages
Proc. SPIE 7277, Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology, 72770B (16 February 2009); doi: 10.1117/12.820510
Show Author Affiliations
Yu Chen, Peking Univ. (China)
Jin He, Peking Univ. (China)
Xuehao Mou, Peking Univ. (China)
Yinglei Wang, Peking Univ. (China)
Lining Zhang, Peking Univ. (China)
Yan Song, Peking Univ. (China)
Mansun Chan, Peking Univ. (China)


Published in SPIE Proceedings Vol. 7277:
Photonics and Optoelectronics Meetings (POEM) 2008: Terahertz Science and Technology
Jianquan Yao; Shenggang Liu; Xi-Cheng Zhang, Editor(s)

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