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Proceedings Paper

Development of polymers for non-CAR resists for EUV lithography
Author(s): Andrew K. Whittaker; Idriss Blakey; James Blinco; Kevin S. Jack; Kirsten Lawrie; Heping Liu; Anguang Yu; Michael Leeson; Wang Yeuh; Todd Younkin
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Paper Abstract

Three strategies for approaching the design and synthesis of non-chemically amplified resists (non-CARs) are presented. These are linear polycarbonates, star polyester-blk-poly(methyl methacrylate) and comb polymers with polysulfone backbones. The linear polycarbonates were designed to cleave when irradiated with 92 eV photons and high Tg alicyclic groups were incorporated into the backbone to increase Tg and etch resistance. The star block copolymers were designed to have a core that is sensitive to 92 eV photons and arms that have the potential to provide properties such as high Tg and etch resistance. Similarly the polysulfone comb polymers were designed to have an easily degradable polymer backbone and comb-arms that impart favorable physical properties. Initial patterning results are presented for a number of the systems.

Paper Details

Date Published: 1 April 2009
PDF: 10 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727321 (1 April 2009); doi: 10.1117/12.820493
Show Author Affiliations
Andrew K. Whittaker, The Univ. of Queensland (Australia)
Idriss Blakey, The Univ. of Queensland (Australia)
James Blinco, The Univ. of Queensland (Australia)
Kevin S. Jack, The Univ. of Queensland (Australia)
Kirsten Lawrie, The Univ. of Queensland (Australia)
Heping Liu, The Univ. of Queensland (Australia)
Anguang Yu, The Univ. of Queensland (Australia)
Michael Leeson, Intel Corp. (United States)
Wang Yeuh, Intel Corp. (United States)
Todd Younkin, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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