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Proceedings Paper

GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths
Author(s): François H. Julien; Maria Tchernycheva; Eva Monroy
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Paper Abstract

This paper reviews the recent progress towards III-nitride intersubband devices based on either quantum wells or quantum dots. We first discuss the specific features of electron confinement in ultrathin GaN/AlN layers Recent achievements on fast electro-optical modulator devices are described. We then discuss a new concept of III-nitride quantum well detectors based on the quantum cascade scheme, which opens prospects for very fast devices. We finally review the progress towards light-emitting devices and saturable absorbers based on GaN/AlN quantum dots.

Paper Details

Date Published: 26 January 2009
PDF: 14 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220J (26 January 2009); doi: 10.1117/12.820380
Show Author Affiliations
François H. Julien, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Maria Tchernycheva, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Eva Monroy, CEA-CNRS Nanophysique et Semiconducteurs (France)

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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