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Proceedings Paper

Status of p-on-n HgCdTe technologies at DEFIR
Author(s): N. Baier; L. Mollard; J. Rothman; G. Destéfanis; P. Ballet; G. Bourgeois; J. P. Zanatta; M. Tchagaspanian; S. Courtas; P. Fougères; C. Pautet; P. Pidancier; L. Rubaldo
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Paper Abstract

This paper presents recent development made at CEA-LETI on manufacturing and characterization of planar p-on-n HgCdTe photodiodes on long-, mid- and short-wavelength. HgCdTe (MCT) layer was grown both by liquid-phase epitaxy (LPE) and by molecular beam epitaxy (MBE) on lattice matched CdZnTe (CZT). The n-type MCT base layer was obtained by indium doping. Planar p-on-n photodiodes were manufactured by arsenic doping, which has been activated by post-implanted annealing in Hg overpressure. As incorporation is achieved either by implantation or by incorporation (during MBE growth). Electro-optical characterizations on these p-on-n photodiodes were made on FPAs. Results show excellent operabilities (99.95% with ±0.5×mean value criterion) in responsivity and NETD and background limited photodetectors. For long-wavelength FPAs, dark current is very low, leading to a R0A product comparable to the state of the art at cut-off wavelength of λc = 9.2 μm. MBE mid-wavelength FPAs present very low responsivity dispersion, reaching 1.1%. Comparisons are made between implantation and growth incorporation As doping technologies.

Paper Details

Date Published: 6 May 2009
PDF: 11 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729823 (6 May 2009); doi: 10.1117/12.820343
Show Author Affiliations
N. Baier, CEA LETI-MINATEC (France)
L. Mollard, CEA LETI-MINATEC (France)
J. Rothman, CEA LETI-MINATEC (France)
G. Destéfanis, CEA LETI-MINATEC (France)
P. Ballet, CEA LETI-MINATEC (France)
G. Bourgeois, CEA LETI-MINATEC (France)
J. P. Zanatta, CEA LETI-MINATEC (France)
M. Tchagaspanian, CEA LETI-MINATEC (France)
S. Courtas, SOFRADIR (France)
P. Fougères, SOFRADIR (France)
C. Pautet, SOFRADIR (France)
P. Pidancier, SOFRADIR (France)
L. Rubaldo, SOFRADIR (France)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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