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Proceedings Paper

Thin nickel oxide films for micro-bolometers
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Paper Abstract

This study represents an investigation of the feasibility of thin nickel oxide film (~100nm in thickness) as a microbolometer material. Thin nickel oxide film was obtained by a heat treatment (below 400 °C) of DC-sputtered Ni film on a SiO2/Si substrate in an O2 environment. Using a parameter analyzer (4156A) with a TEC temperature controller, a spectrum analyzer and a low noise amplifier, a systemic analysis of the electrical and noise characteristics of nickel oxide film is performed. A negative temperature coefficient of resistance (TCR) value of 3.28%/oC and a feasible 1/f noise result ranging from 1Hz to 100Hz were acquired. The characteristics of the thin nickel oxide film obtained in this study are comparable to those of a-Si. Moreover, the nickel oxide thin film retained a stable state at room temperature. Thus, the thin nickel oxide, which is CMOS-compatible and yields high TCR values and proper 1/f noise characteristics through a simple fabrication process, is shown to be a promising micro-bolometric material.

Paper Details

Date Published: 6 May 2009
PDF: 8 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980O (6 May 2009); doi: 10.1117/12.820153
Show Author Affiliations
Dong Soo Kim, Korea Advanced Institute of Science and Technology (Korea, Republic of)
Il Woong Kwon, Korea Advanced Institute of Science and Technology (Korea, Republic of)
Yong Soo Lee, Korea Advanced Institute of Science and Technology (Korea, Republic of)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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