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Proceedings Paper

Fast uncooled low density FPA of VPD PbSe
Author(s): G. Vergara; R. Gutiérrez; L. J. Gómez; V. Villamayor; M. Álvarez; M. C. Torquemada; M. T. Rodrigo; M. Verdú; F. J. Sánchez; R. M. Almazán; J. Plaza del Olmo; P. Rodríguez; I. Catalán; D. Fernández; A. Heras; F. Serra-Graells; J. M. Margarit; L. Terés; G. de Arcas; M. Ruiz; J. M. López
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Paper Abstract

Polycrystalline PbSe technology is today an emerging technology thanks to the method for processing monolithic detectors based on a Vapor Phase Deposition (VPD) technique developed at CIDA. The first monolithic device was successfully processed in 2007 (16x16 FPA, 200 μm pitch and Digital Pixel Sensor (DPS) concept). Remarkable progress has been made improving some technological steps and developing tools for processing high signal rates. In this work, low resolution IR images taken up to 20 Kfps with a real uncooled device are shown. These results represent an important milestone and allocate the VPD PbSe technology among the major players within the domain of uncooled IR detectors. It is a photonic detector suitable for being used in low cost IR imagers sensitive in the MWIR band and with frame rates above 10,000 Hz. The number of applications is therefore huge, some of them specific, such as sensor for Active Protection Systems or low cost seekers.

Paper Details

Date Published: 6 May 2009
PDF: 8 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729829 (6 May 2009); doi: 10.1117/12.819092
Show Author Affiliations
G. Vergara, Instituto Tecnológico de la Marañosa - CIDA (Spain)
R. Gutiérrez, Instituto Tecnológico de la Marañosa - CIDA (Spain)
L. J. Gómez, Instituto Tecnológico de la Marañosa - CIDA (Spain)
V. Villamayor, Instituto Tecnológico de la Marañosa - CIDA (Spain)
M. Álvarez, Instituto Tecnológico de la Marañosa - CIDA (Spain)
M. C. Torquemada, Instituto Tecnológico de la Marañosa - CIDA (Spain)
M. T. Rodrigo, Instituto Tecnológico de la Marañosa - CIDA (Spain)
M. Verdú, Instituto Tecnológico de la Marañosa - CIDA (Spain)
F. J. Sánchez, Instituto Tecnológico de la Marañosa - CIDA (Spain)
R. M. Almazán, Instituto Tecnológico de la Marañosa - CIDA (Spain)
J. Plaza del Olmo, Instituto Tecnológico de la Marañosa - CIDA (Spain)
P. Rodríguez, Instituto Tecnológico de la Marañosa - CIDA (Spain)
I. Catalán, Instituto Tecnológico de la Marañosa - CIDA (Spain)
D. Fernández, Instituto Tecnológico de la Marañosa - CIDA (Spain)
A. Heras, Instituto Tecnológico de la Marañosa - CIDA (Spain)
F. Serra-Graells, Ctr. Nacional de Microelectrónica, CSIC (Spain)
J. M. Margarit, Ctr. Nacional de Microelectrónica, CSIC (Spain)
L. Terés, Ctr. Nacional de Microelectrónica, CSIC (Spain)
G. de Arcas, Univ. Politécnica de Madrid (Spain)
M. Ruiz, Univ. Politécnica de Madrid (Spain)
J. M. López, Univ. Politécnica de Madrid (Spain)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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