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Proceedings Paper

InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects
Author(s): Frank Rutz; Robert Rehm; Johannes Schmitz; Joachim Fleissner; Martin Walther; Ralf Scheibner; Johann Ziegler
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Paper Abstract

InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE) growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range. Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around 10 mK.

Paper Details

Date Published: 6 May 2009
PDF: 10 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981R (6 May 2009); doi: 10.1117/12.819090
Show Author Affiliations
Frank Rutz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Robert Rehm, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Johannes Schmitz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Joachim Fleissner, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Martin Walther, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Ralf Scheibner, AIM Infrarot-Module GmbH (Germany)
Johann Ziegler, AIM Infrarot-Module GmbH (Germany)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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