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Proceedings Paper

The development of HgCdTe infrared detector technology in China
Author(s): W. Lu; L. He; X. S. Chen; L. Ding; S. L. Sun; J. Tang; J. H. Su
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Paper Abstract

The history and milestones of HgCdTe infrared detector technology in China has been reviewed, including the material growth, device processing and design. It is also presented that the HgCdTe infrared detector has been used well in space remote sensing technology. The current status of HgCdTe technology is focused on focal-plane arrays (FPAs) fabricated with HgCdTe grown on different substrate, including GaAs and Si substrate, by epitaxy method. The FPA imaging, material growth process and interface engineering have been discussed.

Paper Details

Date Published: 6 May 2009
PDF: 13 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982Z (6 May 2009); doi: 10.1117/12.819030
Show Author Affiliations
W. Lu, Shanghai Institute of Technical Physics (China)
L. He, Shanghai Institute of Technical Physics (China)
X. S. Chen, Shanghai Institute of Technical Physics (China)
L. Ding, Shanghai Institute of Technical Physics (China)
S. L. Sun, Shanghai Institute of Technical Physics (China)
J. Tang, Kunming Institute of Physics (China)
J. H. Su, Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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