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Proceedings Paper

Silicon germanium oxide (SixGe1-xOy) infrared material for uncooled infrared detection
Author(s): Qi Cheng; M. Almasri
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Paper Abstract

Thin film SixGe1-xOy infrared sensitive material was grown by RF magnetron sputtering, by depositing Si and Ge thin film simultaneously from two deposition targets in an oxygen (O) and argon environment at room temperature and at 400°C. Film composition was varied by adjusting RF power applied to the silicon target and by varying the oxygen flow of the gas mixture in the deposition chamber. The atomic compositions of Si, Ge, and O in the deposited thin film were determined and analyzed using energy dispersive X-ray spectroscopy (EDS). The influence of changing Ge and Si and O compositions on temperature coefficient of resistance (TCR), and resistivity were studied. Different fabrication scenarios have been used to vary the Ge, Si and O concentrations. The highest achieved TCRs and the corresponding resistivities at room temperature were -4.86 %/K and -6.43 %/K, and 2.45×102 Ω cm and 3.34×102 Ω cm using Si0.195Ge0.706O0.099and Si0.127Ge0.835O0.038 for films deposited at room temperature and at 400 oC, respectively.

Paper Details

Date Published: 6 May 2009
PDF: 8 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980K (6 May 2009); doi: 10.1117/12.818866
Show Author Affiliations
Qi Cheng, Univ. of Missouri, Columbia (United States)
M. Almasri, Univ. of Missouri, Columbia (United States)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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