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Proceedings Paper

Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures
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Paper Abstract

Pronounced resonant absorption and frequency dispersion associated with an excitation of collective 2D plasmons have been observed in terahertz (0.5-4THz) transmission spectra of grating-gate 2D electron gas AlGaN/GaN HEMT (high electron mobility transistor) structures at cryogenic temperatures. The resonance frequencies correspond to plasmons with wavevectors equal to the reciprocal-lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. The resonances are tunable by changing the applied gate voltage, which controls 2D electron gas concentration in the channel. The effect can be used for resonant detection of terahertz radiation and for "on-chip" terahertz spectroscopy.

Paper Details

Date Published: 30 April 2009
PDF: 7 pages
Proc. SPIE 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, 73110D (30 April 2009); doi: 10.1117/12.818726
Show Author Affiliations
A. V. Muravjov, Rensselaer Polytechnic Institute (United States)
D. B. Veksler, Rensselaer Polytechnic Institute (United States)
X. Hu, Sensor Electronic Technology, Inc. (United States)
R. Gaska, Sensor Electronic Technology, Inc. (United States)
N. Pala, Florida International Univ. (United States)
H. Saxena, Univ. of Central Florida (United States)
R. E. Peale, Univ. of Central Florida (United States)
M. S. Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 7311:
Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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