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Proceedings Paper

Fabrication of InAs/GaSb type-II superlattice LWIR planar photodiodes
Author(s): Rajesh Rajavel; Brett Nosho; Sevag Terterian; Steven Bui; Yakov Royter; Terrence de Lyon
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Paper Abstract

We have evaluated selective doping techniques for the fabrication of type II LWIR superlattice planar detectors. Ion-implantation and diffusion of dopants were evaluated for selective doping of the electrical junction region in planar photodiodes. Residual damage remains when superlattice structures are implanted with Te ions with an energy of 190 keV and a dose of 5x1013 cm-2, at room temperature. Controlled Zn diffusion profiles with concentrations from 5x1016 to > 5x1018 cm-3 in the wide bandgap cap layer was achieved through a vapor phase diffusion technique. Planar p-on-n diodes were fabricated using selective Zn diffusion. The I-V characteristics were leaky due to G-R and tunneling in the homojunction devices, for which no attempts were made to optimize the n-type absorber doping level. Work is underway for the implementation of planar diodes with the n-on-p architecture through selective Te diffusion. Due to increased minority carrier lifetimes for p-type InAs/GaSb superlattice absorber layers, planar device with the n-on-p architecture have the potential to provide improved performance as compared to the p-on-n counterparts.

Paper Details

Date Published: 7 May 2009
PDF: 9 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981S (7 May 2009); doi: 10.1117/12.818678
Show Author Affiliations
Rajesh Rajavel, HRL Labs., LLC (United States)
Brett Nosho, HRL Labs., LLC (United States)
Sevag Terterian, HRL Labs., LLC (United States)
Steven Bui, HRL Labs., LLC (United States)
Yakov Royter, HRL Labs., LLC (United States)
Terrence de Lyon, HRL Labs., LLC (United States)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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