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Proceedings Paper

Tunable THz plasmon resonances in InGaAs/InP HEMT
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Paper Abstract

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis.

Paper Details

Date Published: 30 April 2009
PDF: 6 pages
Proc. SPIE 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, 73110I (30 April 2009); doi: 10.1117/12.818520
Show Author Affiliations
R. E. Peale, Univ. of Central Florida (United States)
H. Saxena, Univ. of Central Florida (United States)
W. R. Buchwald, Air Force Research Lab. (United States)
G. C. Dyer, Univ. of California, Santa Barbara (United States)
S. J. Allen, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 7311:
Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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