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Proceedings Paper

Single-layer SiGe infrared wide-band microemitter arrays by MEMS technology
Author(s): V. K. Malyutenko; O. Yu. Malyutenko; V. Leonov; C. Van Hoof
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Paper Abstract

Although thermal IR microemitters making use of Honeywell planar technology remain the devices of choice for the last decade, a significant disadvantage of these devices is their two-level structure, which results in low fill-factor and causes mechanical and thermal stresses between the layers. In this paper, the technology for single-level polycrystalline SiGe thermal microemitters, their design, and performance characteristics are presented. The 128-element linear arrays with a fill-factor of 88 % and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60 × 60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate time response of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The SiGe device application to the infrared dynamic scene simulation and critical factors that aid their competitiveness over conventional planar two-level design are discussed.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7318, Micro- and Nanotechnology Sensors, Systems, and Applications, 73181F (11 May 2009); doi: 10.1117/12.818482
Show Author Affiliations
V. K. Malyutenko, Lashkaryov Institute of Semiconductor Physics (Ukraine)
O. Yu. Malyutenko, Lashkaryov Institute of Semiconductor Physics (Ukraine)
V. Leonov, IMEC (Belgium)
C. Van Hoof, IMEC (Belgium)

Published in SPIE Proceedings Vol. 7318:
Micro- and Nanotechnology Sensors, Systems, and Applications
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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