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Proceedings Paper

High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate
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Paper Abstract

In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type II superlattice infrared detector a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is a significant step toward third generation infrared imaging at low cost. The device performances of Type II superalttice photodetectors grown on these two substrates are compared.

Paper Details

Date Published: 7 May 2009
PDF: 13 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981T (7 May 2009); doi: 10.1117/12.818373
Show Author Affiliations
Binh-Minh Nguyen, Northwestern Univ. (United States)
Darin Hoffman, Northwestern Univ. (United States)
Edward Kwei-wei Huang, Northwestern Univ. (United States)
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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