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Proceedings Paper

Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
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Paper Abstract

Recent advances in growth techniques, structure design and processing have lifted the performance of Type-II InAs/GaSb superlattice photodetectors. The introduction of a M-structure design improved both the dark current and R0A of Type-II photodiodes. This new structure combined with a thick absorbing region demonstrated background limited performance at 77K for a 300K background and a 2-π field of view. A focal plane array with a 9.6 μm 50% cutoff wavelength was fabricated with this design and characterized at 80K. The dark current of individual pixels was measured around 1.3 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without anti-reflective coating was 72%. The noise equivalent temperature difference reached 23 mK. The deposition of an anti-reflective coating improved the NEDT to 20 mK and the quantum efficiency to 89%.

Paper Details

Date Published: 6 May 2009
PDF: 12 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981Q (6 May 2009); doi: 10.1117/12.818271
Show Author Affiliations
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Binh-Minh Nguyen, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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