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Proceedings Paper

High-power semiconductor lasers at eye-safe wavelengths
Author(s): Mark L. Osowski; Yossi Gewirtz; Robert M. Lammert; Se W. Oh; Chameli Panja; Victor C. Elarde; Laurent Vaissie; Falgun D. Patel; Jeffrey E. Ungar
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Paper Abstract

InP based diode lasers are required to realize the next generation of eyesafe applications, including direct rangefinding and HEL weapons systems. We report on the progress of high power eyesafe single spatial and longitudinal mode 1550nm MOPA devices, where we have achieved peak powers in excess of 10W with 50ns pulse widths. A conceptual model based on our recent MOPA results show the path towards scaling to high powers based on spatial beam combination with operating conditions suitable for direct rangefinding applications. We also report on the progress towards high power 14xx and 15xx nm pump lasers for eyesafe HEL systems.

Paper Details

Date Published: 7 May 2009
PDF: 7 pages
Proc. SPIE 7325, Laser Technology for Defense and Security V, 73250V (7 May 2009); doi: 10.1117/12.818067
Show Author Affiliations
Mark L. Osowski, QPC Lasers, Inc. (United States)
Yossi Gewirtz, QPC Lasers, Inc. (United States)
Robert M. Lammert, QPC Lasers, Inc. (United States)
Se W. Oh, QPC Lasers, Inc. (United States)
Chameli Panja, QPC Lasers, Inc. (United States)
Victor C. Elarde, QPC Lasers, Inc. (United States)
Laurent Vaissie, QPC Lasers, Inc. (United States)
Falgun D. Patel, QPC Lasers, Inc. (United States)
Jeffrey E. Ungar, QPC Lasers, Inc. (United States)


Published in SPIE Proceedings Vol. 7325:
Laser Technology for Defense and Security V
Mark Dubinskii; Stephen G. Post, Editor(s)

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