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Proceedings Paper

Low-light-level CMOS image sensor for digitally fused night vision systems
Author(s): Boyd Fowler; Chiao Liu; Steve Mims; Janusz Balicki; Wang Li; Hung Do; Paul Vu
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Paper Abstract

In this paper we present a VNIR solid state sensor technology suitable for next generation fused night vision systems. This technology is based on a highly optimized low power 0.18um CMOS image sensor (CIS) process. We describe a 320(H) x 240(V) pixel prototype sensor based on this technology. The sensor features 5T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both correlated double sampling (CDS) and a lateral anti-blooming drain. The measured peak quantum efficiency of the sensor is greater than 50% at 600nm, and the read noise is less than 1e- RMS at room temperature. The sensor does not have any multiplicative noise. The full well capacity is greater than 40ke-, the dark current is less than 3.8pA/cm2 at 20ºC, and the MTF at 77 lp/mm is 0.4 at 600nm. The sensor also achieves an intra-scene linear dynamic range of greater than 90dB (30000:1) at room temperature.

Paper Details

Date Published: 7 May 2009
PDF: 12 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981D (7 May 2009); doi: 10.1117/12.818053
Show Author Affiliations
Boyd Fowler, Fairchild Imaging (United States)
Chiao Liu, Fairchild Imaging (United States)
Steve Mims, Fairchild Imaging (United States)
Janusz Balicki, Fairchild Imaging (United States)
Wang Li, Fairchild Imaging (United States)
Hung Do, Fairchild Imaging (United States)
Paul Vu, Fairchild Imaging (United States)

Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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