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Proceedings Paper

Investigation of GaN layers doped with Er3+ and Er3+ + Yb3+ ions using the transmittance measurement
Author(s): Václav Prajzler; Ivan Hüttel; Jarmila Spirková; Jirí Oswald; Vratislav Perina; Vitezslav Jerábek
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Paper Abstract

We report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1 530 nm due to the Er3+ intra-4f 4I13/24I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm.

Paper Details

Date Published: 18 November 2008
PDF: 6 pages
Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381B (18 November 2008); doi: 10.1117/12.818015
Show Author Affiliations
Václav Prajzler, Czech Technical Univ. in Prague (Czech Republic)
Ivan Hüttel, Institute of Chemical Technology (Czech Republic)
Jarmila Spirková, Institute of Chemical Technology (Czech Republic)
Jirí Oswald, Institute of Physics (Czech Republic)
Vratislav Perina, Nuclear Physics Institute (Czech Republic)
Vitezslav Jerábek, Czech Technical Univ. in Prague (Czech Republic)


Published in SPIE Proceedings Vol. 7138:
Photonics, Devices, and Systems IV
Pavel Tománek; Dagmar Senderáková; Miroslav Hrabovský, Editor(s)

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