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Proceedings Paper

GaSb substrates with extended IR wavelength for advanced space-based applications
Author(s): L. P. Allen; P. Flint; G. Dallas; D. Bakken; K. Blanchat; G. J. Brown; S. R. Vangala; W. D. Goodhue; K. Krishnaswami
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Paper Abstract

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 μm. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 μm with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Paper Details

Date Published: 6 May 2009
PDF: 7 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72983P (6 May 2009); doi: 10.1117/12.817858
Show Author Affiliations
L. P. Allen, Galaxy Compound Semiconductors, Inc. (United States)
P. Flint, Galaxy Compound Semiconductors, Inc. (United States)
G. Dallas, Galaxy Compound Semiconductors, Inc. (United States)
D. Bakken, Galaxy Compound Semiconductors, Inc. (United States)
K. Blanchat, Galaxy Compound Semiconductors, Inc. (United States)
G. J. Brown, Air Force Research Lab. (United States)
S. R. Vangala, Univ. of Massachusetts Lowell (United States)
W. D. Goodhue, Univ. of Massachusetts Lowell (United States)
K. Krishnaswami, Pacific Northwest National Lab. (United States)

Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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