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Proceedings Paper

Single-mode 2.4μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing
Author(s): James A. Gupta; Pedro J. Barrios; Jean Lapointe; Geof C. Aers; Daniel Poitras; Craig Storey; Philip Waldron
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Paper Abstract

Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20°C continuous-wave operation, devices with a 400μm-long cavity provided 4.5mW total output power at the 2396nm target wavelength. Anti-reflection and high-reflection facet coatings exhibited no deleterious effects on the laser tunability or mode quality, thus allowing the preferential extraction of output power from a single laser facet.

Paper Details

Date Published: 26 January 2009
PDF: 7 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220A (26 January 2009); doi: 10.1117/12.817849
Show Author Affiliations
James A. Gupta, National Research Council Canada (Canada)
Pedro J. Barrios, National Research Council Canada (Canada)
Jean Lapointe, National Research Council Canada (Canada)
Geof C. Aers, National Research Council Canada (Canada)
Daniel Poitras, National Research Council Canada (Canada)
Craig Storey, National Research Council Canada (Canada)
Philip Waldron, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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