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Proceedings Paper

Development history of HgCdTe infrared detectors in Japan
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Paper Abstract

The authors summarize the past 40-years history on the development of HgCdTe infrared detectors in Japan. At the early stage of development of material growth, high-quality HgCdTe layers were obtained by liquid phase epitaxy technique, owing to lattice-matched CdZnTe substrates. Hetero-epitaxial growth techniques of HgCdTe were also successfully developed to obtain epilayers on much larger and cheaper substrates such as GaAs and Si, using methods of metal-organic chemical vapor deposition and molecular beam epitaxy, where key issues were controlling surface orientation, surface polarity and so forth. Fabrication process of p-on-n junction photodiodes was developed with various improvements on ion implantation and surface passivation. On the basis of technologies mentioned above, large-scale infrared focal plane arrays were realized with superior thermal images.

Paper Details

Date Published: 6 May 2009
PDF: 15 pages
Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982X (6 May 2009); doi: 10.1117/12.817404
Show Author Affiliations
Hironori Nishino, Fujitsu Labs. (Japan)
Naoki Oda, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 7298:
Infrared Technology and Applications XXXV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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