Share Email Print
cover

Proceedings Paper

Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n- ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.

Paper Details

Date Published: 28 February 2009
PDF: 7 pages
Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170P (28 February 2009); doi: 10.1117/12.817033
Show Author Affiliations
C. Bayram, Northwestern Univ. (United States)
F. Hosseini Teherani, Nanovation SARL (France)
David J. Rogers, Nanovation SARL (France)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7217:
Zinc Oxide Materials and Devices IV
Ferechteh Hosseini Teherani; Cole W. Litton; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top