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Proceedings Paper

ICP etching of ZnO in BCl3/SF6 gas mixtures
Author(s): Karen J. Nordheden; Bogdan A. Pathak; John L. Alexander
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Paper Abstract

ZnO epitaxial layers were plasma etched using BCl3/SF6 gas mixtures in an Oxford Instruments System 100 ICP 180. Etch rates were studied as a function of gas composition, pressure, ICP coil power and RF power. The ZnO etch rate in pure BCl3 at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was ~1175 Å/min (-1000V bias). The etch rate increased with increasing SF6 percentage in the flow, and for the same conditions in pure SF6 the etch rate was ~1350 Å/min (-820V bias).

Paper Details

Date Published: 12 February 2009
PDF: 5 pages
Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170Q (12 February 2009); doi: 10.1117/12.817016
Show Author Affiliations
Karen J. Nordheden, The Univ. of Kansas (United States)
Bogdan A. Pathak, The Univ. of Kansas (United States)
John L. Alexander, The Univ. of Kansas (United States)


Published in SPIE Proceedings Vol. 7217:
Zinc Oxide Materials and Devices IV
Ferechteh Hosseini Teherani; Cole W. Litton; David J. Rogers, Editor(s)

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