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Proceedings Paper

Physics of quantum well solar cells
Author(s): N. J. Ekins-Daukes; J. Adams; I. M. Ballard; K. W. J. Barnham; B. Browne; J. P. Connolly; T. Tibbits; G. Hill; J. S. Roberts
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Paper Abstract

Incorporating quantum wells into multi-junction III-V solar cells provides a means of adjusting the absorption edge of the component junctions. Further, by using alternating compressive and tensile materials, a strain-balanced stack of quantum well and barrier layers can be grown, defect free, providing absorption-edge / lattice parameter combinations that are inaccessible using bulk materials. Incomplete absorption in the quantum wells has been addressed using a distributed Bragg reflector, extending the optical path length through the cell and enabling photon recycling to take place. State of the art single-junction quantum well solar cells have now reached an efficiency of 27.3% under 500X solar concentration and are projected to reach 34% in a double junction configuration.

Paper Details

Date Published: 24 February 2009
PDF: 11 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110L (24 February 2009); doi: 10.1117/12.816946
Show Author Affiliations
N. J. Ekins-Daukes, Imperial College London (United Kingdom)
J. Adams, Imperial College London (United Kingdom)
I. M. Ballard, Imperial College London (United Kingdom)
K. W. J. Barnham, Imperial College London (United Kingdom)
Quantasol Ltd. (United Kingdom)
B. Browne, Imperial College London (United Kingdom)
J. P. Connolly, Imperial College London (United Kingdom)
T. Tibbits, Quantasol Ltd. (United Kingdom)
G. Hill, The Univ. of Sheffield (United Kingdom)
J. S. Roberts, Quantasol Ltd. (United Kingdom)
The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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