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Proceedings Paper

Electrical and optical characterization of individual GaSb nanowires
Author(s): Wei Xu; Alan Chin; Laura Ye; Cun-Zheng Ning; Hongbin Yu
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Paper Abstract

Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around ØBeff =0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.

Paper Details

Date Published: 17 February 2009
PDF: 7 pages
Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240G (17 February 2009); doi: 10.1117/12.816931
Show Author Affiliations
Wei Xu, Arizona State Univ. (United States)
Alan Chin, NASA Ames Research Ctr. (United States)
Laura Ye, NASA Ames Research Ctr. (United States)
Cun-Zheng Ning, Arizona State Univ. (United States)
NASA Ames Research Ctr. (United States)
Hongbin Yu, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 7224:
Quantum Dots, Particles, and Nanoclusters VI
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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