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Proceedings Paper

MOVPE growth for UV-LEDs
Author(s): Arne Knauer; Frank Brunner; Tim Kolbe; Viola Küller; Hernan Rodriguez; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Paper Abstract

Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth sequence. We will compare different buffer layer technologies, in particular GaN/sapphire for LEDs emitting at 380 nm and AlN/AlGaN buffer for shorter wavelength LEDs. By increasing the aluminum content in the InAlGaN multiplequantum- well active region and by optimizing the composition and doping profile of the electron blocking layers UV LEDs with emission wavelength between 380 nm and 318 nm are demonstrated.

Paper Details

Date Published: 3 February 2009
PDF: 9 pages
Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310G (3 February 2009); doi: 10.1117/12.816927
Show Author Affiliations
Arne Knauer, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Frank Brunner, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Tim Kolbe, Technische Univ. Berlin (Germany)
Viola Küller, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Hernan Rodriguez, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Sven Einfeldt, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Markus Weyers, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Michael Kneissl, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 7231:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu, Editor(s)

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