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Proceedings Paper

Time dependence of SEM signal due to charging: measurements and simulation using Monte Carlo software
Author(s): H. Abe; S. Babin; S. Borisov; A. Hamaguchi; A. Ivanchikov; M. Kadowaki; Y. Yamazaki
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Paper Abstract

CD-SEM measurement is the main measuring tool of critical dimensions (CD). CD-measurements involve systematic errors that depend on SEM set-up and the pattern. In addition to systematic errors, charging of a wafer plays an important role in CD-SEM and defect inspection tools. Charging dependence of secondary electron emission coefficient which is one of the major charging parameters, was studied. Timing characteristics were measured and then simulated using Monte Carlo model. The measurements and simulations were done for a multiple number of frames and for imaging of a contact hole using pre-charge of a large area. The results of simulation confirmed the measured results. The understanding of the effect helps in tuning the settings of CD-SEM.

Paper Details

Date Published: 23 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727248 (23 March 2009); doi: 10.1117/12.816899
Show Author Affiliations
H. Abe, Toshiba Corp. (Japan)
S. Babin, aBeam Technologies (United States)
S. Borisov, aBeam Technologies (United States)
A. Hamaguchi, Toshiba Corp. (Japan)
A. Ivanchikov, aBeam Technologies (United States)
M. Kadowaki, Toshiba Corp. (Japan)
Y. Yamazaki, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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