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Proceedings Paper

Characterizing semiconductor materials with terahertz radiation pulses
Author(s): A. Krotkus; R. Adomavičius; V. Pačebutas
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Paper Abstract

Experimental techniques that exploit pulses of the electromagnetic radiation with characteristic spectra covering the frequency range between few hundreds GHz and few THz and their applications in the characterization of various semiconductor materials are reviewed. The list of material parameters that can be determined by using pulsed THz techniques includes, among other, carrier lifetimes, their energy and momentum relaxation times, inter-valley separation in the conduction band, and nonlinear optical susceptibilities of the material.

Paper Details

Date Published: 2 December 2008
PDF: 12 pages
Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 714205 (2 December 2008); doi: 10.1117/12.816869
Show Author Affiliations
A. Krotkus, Semiconductor Physics Institute (Lithuania)
R. Adomavičius, Semiconductor Physics Institute (Lithuania)
V. Pačebutas, Semiconductor Physics Institute (Lithuania)

Published in SPIE Proceedings Vol. 7142:
Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
Janis Spigulis; Andris Krumins; Donats Millers; Andris Sternberg; Inta Muzikante; Andris Ozols; Maris Ozolinsh, Editor(s)

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