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Proceedings Paper

Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning
Author(s): Takanori Kudo; Charito Antonio; John Sagan; Srinivasan Chakrapani; Deepa Parthasarathy; Sungeun Hong; Muthiah Thiyagarajan; Yi Cao; Munirathna Padmanaban
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Paper Abstract

This paper compares thermal shrink properties of contact holes and chemical shrink performance for 193 nm lithography. Pitch dependence, shrink properties, contact hole circularity, sidewall roughness, and process window are also discussed. Thermal flow process exhibited more pitch dependence than chemical shrink process. Thermal shrink rate increased substantially at higher bake temperatures. Contact holes in defocused area shrunk non-evenly and DOF deteriorated upon heating. In chemical shrink process, shrink rate was hardly influenced by mixing bake temperature, contact holes from center focus to defocus area shrunk evenly preserving effective DOF and MEF became smaller at smaller CD. Chemical shrink has clear advantages over thermal flow process and sub-70 nm contact holes were obtained with iso-dense overlap DOF 0.25 μm by optimizing resist formulations and process conditions. Application of shrink processes will pave the way for the next generation LSI production.

Paper Details

Date Published: 1 April 2009
PDF: 12 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730X (1 April 2009); doi: 10.1117/12.816633
Show Author Affiliations
Takanori Kudo, AZ Electronic Materials USA Corp. (United States)
Charito Antonio, AZ Electronic Materials USA Corp. (United States)
John Sagan, AZ Electronic Materials USA Corp. (United States)
Srinivasan Chakrapani, AZ Electronic Materials USA Corp. (United States)
Deepa Parthasarathy, AZ Electronic Materials USA Corp. (United States)
Sungeun Hong, AZ Electronic Materials USA Corp. (United States)
Muthiah Thiyagarajan, AZ Electronic Materials USA Corp. (United States)
Yi Cao, AZ Electronic Materials USA Corp. (United States)
Munirathna Padmanaban, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

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